Dr.

Dr. Chandrima Mondal

Department : Department of Electronics & Telecommunication Engg

Designation : Assistant Professor

Additional Roles and Responsibilities :

NBA Co-coordinator

Common 1st year Coordination member

Course coordinator, Basic Electronics

Co-Coordinator IC Center, JU

Coordinator of M.E in Nanoelectronics and VLSI

Secratary IEEE WOMEN IN ENGINEERING KOLKATA

Treasurer IEEE CASS KOLKATA

Address : DEPT. OF ETCE, JADAVPUR UNIVERSITY 188 Raja S C Mallick Road Kolkata-700032

E-Mail: chandrima.mondal@jadavpuruniversity.in

Office Phone Number: 2809

About

View Detailed CV

Subjects Taught

• Analog Circuit, Theory and Laboratory• Low Power VLSI design• Analog CMOS Design and Technology• Microelectronics Technology• Physical Electronics• Semiconductor device physics and modelling • Basic Electronics

Research Interests

• Semiconductor Device Model• Nanoelectronics• Negative Capacitance FET• GaN HEMT• Process variability• FinFET, GAA• InAs MOSFET• VLSI• Graphene • 2D materials• Bio Sensor• Solar cell• Black phosphorus

Notable Activities

• IEEE CASS Kolkata Section, Treasurer • Organised Faculty Development Program on Entrepreneurship, Innovation and Capital Venture from 18th to 25th February 2021.• organised One Day Colloquium on 14th March, 2024, on Efficient Circuits and Systems for Next-Generation Cryptography by Dr. Utsav Banerjee Department of Electronic Systems Engineering Indian Institute of Science Bangalore• IEEE WIE Kolkata Section ExCom Member, Secretary • Organised Poster presentations competition to celebrate 75 years of Transistors

Notable Achievements

• CSIR-SRF during Ph.D. • 2nd position in M. Tech. in Radio Physics and Electronics (2010)• GATE scholarship during M. Tech.• National Merit Scholarship, Govt. of West Bengal

Journal Papers Published

• Effects of temperature and channel thickness on digital and analog performance of InAs quantum well nMOSFETs, Sumedha Dasgupta, Chandrima Mondal & Abhijit Biswas, Oct 2019, Volume 26, pages 1265–1271 (Microsystem Technologies, Springer) • • • S. Mitra, C. Mondal and A. Biswas, "Design of MoS2 NCFET Featuring Subthermodynamic Limit SS, No More Than 5 mV/V DIBR, and 0.8% Threshold Voltage Variation at 10-nm Channel Length: Modeling and Analysis," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2025.3529407. S. Dasgupta, C. Mondal and A. Biswas, “Role of grooving angle of 14-nm InAs quantum well for improvement of analog/RF and linearity performance,” IET circuits Devices and Systems, October, 2019, doi:10.1049/iet cds.2019.0064 [online] 3.S. Dasgupta, C. Mondal and A. Biswas, “Effect of temperature and channel thickness on digital and analog performance of InAs Quantum Well nMOSFETs,” Microsystems Technologies, pp.1-7, October, 2019, doi:10.1007/s00542-019-04657-z [online] 4.J. Paul, C. Mondal and A. Biswas, “Subthreshold modeling of nanoscale GeSn-on-Insulator MOSFETs including quantum effects,” Materials Science in Semiconductor Processing, vol. 94, pp. 128–135, January 2019. 5.J. Paul, C. Mondal and A. Biswas, “Suppression of Buried Oxide Induced Variability on Digital Performance of GeOI pMOSFETs using Substrate Bias Scheme,” Microsyst Technol 26, 1605–1611 (2020). Microsystem Technologies, DOI https://doi.org/10.1007/s00542-019-04701-y, November 2019. 6.J. Paul, C. Mondal and A. Biswas, “Studies of buried oxide properties on nanoscale GeOI pMOSFETs for design of a high performance common source amplifier,” Materials Science in Semiconductor Processing, vol. 80, pp. 85–92, June 2018. 7.J. Paul, C. Mondal and A. Biswas, “Enhancing digital performance of nanoscale GeOI MOSFETs through optimization of buried oxide properties and channel thickness,” Microsystem technologies, DOI https://doi.org/10.1007/s00542-018-4113-x, September 2018. 8.C. Mondal, A. Biswas, Performance Analysis of Nanoscale GeSn MOSFETs for Mixed-Mode Circuit Applications, Materials Science in Semiconductor Processing, Elsevier, 66, 109–116, 2017. 9.C. Mondal and A. Biswas, “Binary Alloy Enabled Gate Work Function Engineering of Nanoscale UTB-GeOI MOSFETs for Mixed-Signal System-on-Chip Applications”, Superlattices and Microstructures, Vol. 75, pp. 118–126, 2014. 10.C. Mondal and A. Biswas, “2-D Compact Model for Drain Current of Fully Depleted NanoscaleGeOI MOSFETs for Improved Analog Circuit Design”, IEEE Trans. Electron Devices, Vol. 60, No. 8, pp. 2525-2531, 2013. 11.C. Mondal and A. Biswas, “Performance analysis of nanoscale germanium on insulator MOSFETs for mixed-signal system on-chip applications”, Superlattices and Microstructures, Vol. 63, pp. 277-288, 2013. 12.C. Mondal and A. Biswas, “Analog Performance of Nanoscale Germanium- on-Insulator pMOSFETs”, Int. J. of Advanced Electrical and Electronics Engineering, Vol. 2, Issue 6, pp. 143-147, 2013. 13.C. Mondal and A. Biswas, “Studies on halo implants in controlling short-channel effects of nanoscale Ge channel pMOSFETs”, IEEE Trans. Electron Devices, Vol. 59, No. 9, pp 2338-2344, 2012. • Dasgupta, S., Mondal, C. and Biswas, A. (2019), Role of grooving angle of 14-nm-InAs channel quantum well MOSFETs in improving analogue/RF and linearity performance. IET Circuits Devices Syst., 13: 1292-1298. https://doi.org/10.1049/iet-cds.2019.0064• Subthreshold modeling of nanoscale germanium-tin (GeSn)-on-insulator MOSFETs including quantum effects, Materials Science in Semiconductor Processing, Jayanti Paul, Chandrima Mondal, Abhijit Biswas, 2019, Volume 94, Pages 128-135, Materials Science in Semiconductor Processing, https://doi.org/10.1016/j.mssp.2019.01.040.

Publication in Conference Proceedings

• 1.Nahida Banu, Chandrima Mondal, and Abhijit Biswas, "Normally-off GaN Superjunction Negative Capacitance HEMT (SJNCHEMT) with recessed i-GaN layer,"5th international conference on frontiers in computing and systems, COMSYS 2024, 13-15 December, 2024. 2.Sumedha Dasgupta, and Chandrima Mondal and Abhijit Biswas, "Simulation study of single event transient effect on InAs quantum well n-MOSFETs under varied bias conditions,"5th international conference on frontiers in computing and systems, COMSYS 2024, 13-15 December, 2024. 3.Nahida Banu and Chandrima Mondal "Super Junction GaN HEMT: Achieving High Breakdown Voltage and Low Harmonic Distortion, "8th International Conference on Computers and Devices for Communication (CODEC), December 2023. 4.Sumedha Dasgupta, and Chandrima Mondal and Abhijit Biswas "Effect of Grooving Angle on Analog Performance of InGaSb Quantum Well p-MOSFET," 8th International Conference on Computers and Devices for Communication (CODEC), December 2023. 5.Richika Arya, Chandrima Mondal "Impact of Cap Length in InAlAs/InGaAs Based High Electron Mobility Transistor,"8th International Conference on Computers and Devices for Communication (CODEC), December 2023. 6.Indrani Mazumder, Chandrima Mondal and Abhijit Biswas, "4H-SiC Semi-Circle Gate Power MOSFET with Low ON-Resistance and High BreakdownVoltage" 2022 IEEE Calcutta Conference (CALCON), p 80, 2022. 7.Jayanti Paul, Chandrima Mondal and Abhijit Biswas, "Impact of channel thickness on Single-EventTransient in InAs Quantum Well n-MOSFETs" 2022 IEEE Calcutta Conference (CALCON), p 71, 2022. 8.Nahida Banu and Chandrima Mondal "Reduction of Current-Collapsing in Small Gate to Drain Length AlGaN/ GaN Super Hetero-Junction HEMT for High-Frequency Applications, " Proceedings of International Conference on Frontiers in Computing and Systems COMSYS 2022, p. 423, 19-21 December, 2022. 9.Nahida Banu and Chandrima Mondal, "A Super Heterojunction Negative Capacitance High Electron Mobility Field Effect Transistor, "IWPSD 2021, Indian Institute of Technology Delhi, New Delhi, paper id 336, December 14, 2021. 10.S. Dasgupta, C. Mondal and A. Biswas, “ Reduction of Harmonic Distortion of 14-nm InAs quantum well nMOSFET for high DC to AC conversion and high voltage gain,” 4th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference Proceedings of Technical Papers, Malayasia, pp. 28-31, 2020/4/6 11.S. Dasgupta, C. Mondal and A .Biswas, “Effect of temperature on digital and analog performance of InAs Quantum Well nMOSFETs,” in Proc. 6th International Conference on Microelectronics, Circuits and Systems (MICRO 2019), Kolkata, pp. 72-77, 2019/07 12.Jayanti Paul, Chandrima Mondal and Abhijit Biswas, “Analysis of Buried Oxide Variability in GeOI pMOSFETs for Digital Performance,” in Proceedings ofMicro2019, Amity University Kolkata, pp. 111-115, July 2019. 13.Jayanti Paul, Chandrima Mondal and Abhijit Biswas, “Analysis of Buried Oxide Variability in GeOI pMOSFETs for Digital Performance,” in Proceedings ofMicro2019, Amity University Kolkata, pp. 111-115, July 2019. 14.C. Mondal and A. Biswas, “An analytical model for the high performance Ge channel p-MOSFETs with high-k/metal gate stacks based on surface potential approach,” in Proc. of International Conference on Emerging Trends in Engineering Technologies (ICETES), Noorul Islam University, Tamilnadu, March 25-26 , 2010, p. 216. 15.C. Mondal and A. Biswas, “Controlling of short channel effects in pocket implanted Ge channel pMOSFETs with high-k gate stacks,” XVI International Workshop on the Physics of Semiconductor Devices (IWPSD), IIT Kanpur, Dec. 19-22, 2011, p.119. 16.C. Mondal and A. Biswas, “Influence of Halo implants in Controlling Short Channel Effects (SCEs) of Ge Channel pMOSFETs,” in Proc. of International Conference on Nanoscience and Technology (ICFANT), Jadavpur University, Kolkata, Dec. 9-11, 2010, p. 105. \ 17.C. Mondal and A. Biswas, “Controlling of Short Channel Effects in Pocket Implanted Ge Channel p MOSFETs with High-k Gate Stacks,” in Proc. of SPIE, vol. 8549, 2012, p. 85490A-1. 18.C. Mondal and A. Biswas, “Modeling of High Performance Nanoscale GeOI pMOSFETs for Analog Applications,” in Proc. of 2nd International Conference on Nanotechnology and Biosensors (ICNB-2), Raghu Engineering college, Visakhapatnam, Dec. 28-29, 2011, p. 172. 19.C. Mondal and A. Biswas, “Analog performance of nanoscale Germanium-on-Insulator pMOSFETs,” in Proc. of International Conference on Electrical, Electronics and Computer Science (ICEECS), Hotel Solitaire, Chandigarh, March 24, 2013, p. 98. 20.C. Mondal and A. Biswas, “Impact of Metal Source/Drain Cotacts on Ge-on-Insulator (GeOI) MOSFETs,” in Proc. of International Conference of Electrical and Electronics Engineering (ICEEE), Hyderabad (Interscience Research Network), August 12, 2012, p. 82. 21.C. Mondal and A. Biswas, “Influence of Work Function Engineering on the Short Channel Effects of Nanoscale GeOI MOSFFETs.,” in Proc. of International Conference on Electrical, Electronics and Computer Science (ICEECS), Hotel Solitaire, Chandigarh, March 24, 2013, p. 103. 22.C. Mondal and A. Biswas, “Role of Gate Work Function Profiles on the Analog Performance of Nanoscale UTB-GeOI MOSFETs,” in Proc. of International Conference on Information & Communication Engineering (ICICE-2014), Hotel Trinity Isle, Pai Vaibhav, Bangalore, June 29, 2014, p. 1. 23.C. Mondal and A. Biswas, “Influence of Work Function Engineering on the Analog Performance of Nanoscale UTB-GeOI MOSFETs,” in Proc. of International Conference on Innovations in Electronics and Communication Engineering (ICIECE-2013), Guru Nanak Institutions, Hyderabad, August 9-10, 2013, p. 662. 24.C. Mondal and A. Biswas, “Improvement of Analog Circuit Performance of Nanoscale p-MOSFETs Enabled by Strained GeSn Channel,” in Proc. of International Conference on Information & Communication Engineering (ICICE-2014), Hotel Trinity Isle, Pai Vaibhav, Bangalore, June 29, 2014, p. 6. 25.J. Paul, C. Mondal and A. Biswas, “Impact of Channel Length and Thickness on the Short Channel Effects of GeOI MOSFETs,” in Proc. of Internatinonal Conference on Emerging Technology Trends in Electronics, Communication & Networking (ET2ECN - 2014), Sardar Vallabhbhai National Institute of Technology, Surat, Gujarat, December 26 - 27, 2014, p. 13.

NBA Accreditation:UG-CSE,ETCE (6yrs) & UG-IT,IEE,PE (3yrs)

Dr.

Dr. Chandrima Mondal

Department : Department of Electronics & Telecommunication Engg

Designation : Assistant Professor

Additional Roles and Responsibilities :

Address : DEPT. OF ETCE, JADAVPUR UNIVERSITY 188 Raja S C Mallick Road Kolkata-700032

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NBA Accreditation:UG-CSE,ETCE (6yrs) & UG-IT,IEE,PE (3yrs)